Electrical contact properties of Cu2S nanowires grown vertically on Cu foil by gas–solid reaction
作者： Youngseok Lim , Young-Woo Ok , Sung-Ju Tark , Yoonmook Kang , Donghwan Kim
DOI: 10.1016/J.CAP.2008.08.035
关键词: Nanotechnology 、 Energy-dispersive X-ray spectroscopy 、 Gas solid 、 Schottky barrier 、 FOIL method 、 Materials science 、 Analytical chemistry 、 Nanowire 、 Electrical contacts 、 Oxide
摘要: Abstract We grew Cu 2 S nanowires vertically on foil by gas–solid reaction with a gas mixture of O and H S. The electrical contact properties between the were investigated using modified current–voltage–temperature plot. Cu/Cu layer exhibited characteristics Schottky barrier height ∼0.72 eV, which was closer to value for than Energy dispersive spectroscopy results showed presence Cu-oxide foil. overall structure Cu/Cu-oxide/Cu controlled Cu/Cu-oxide.
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