作者: Jeffrey A. Bean , Badri Tiwari , Gary H. Bernstein , P. Fay , Wolfgang Porod
DOI: 10.1116/1.3039684
关键词: Dipole 、 Biasing 、 Diode 、 Optics 、 Optoelectronics 、 Electron-beam lithography 、 Fabrication 、 Materials science 、 Vacuum deposition 、 Detector 、 Dipole antenna
摘要: This work focuses on dipole antenna-coupled metal-oxide-metal diodes, which can be used for the detection of long wave infrared radiation. These detectors are defined using electron beam lithography and fabricated with shadow evaporation metal deposition. Along offering complementary oxide semiconductor compatible fabrication, these promise high speed frequency selective without biasing, a small pixel footprint, full functionality at room temperature cooling. Direct current current-voltage characteristics presented along detector response to 10.6μm The tailored provide multispectral imaging in specific applications by modifying device geometries.