Pseudo FF and Voc analysis of Cz-Si Based Low Concentrator Solar Cells☆

摘要: Abstract In this work, industrially feasible silicon based concentrator solar cells are characterized in dependence of the boron-oxygen-complex being its active and idle state. The work emphasis on concentration therefore injection dependent behaviour open-circuit-voltage pseudo fill factor. It is shown, that beside usual logarithmic open-circuit-voltage, an additional gain 11 mV achieved. Furthermore, a higher factor limit due to increasing towards irradiance observed. both quantitiescan be described by minority charge carriers diminishing influence other recombination channels with ideality greater than unity. This analysis shows made Czochralski grown show reduced sensitivity means defect decreasing from 1.8 % at one sun 0.6 % 17 suns. Thus for applications, boron-oxygen-limited bulk lifetime does not corrupt final cell performance such extent as conventional, one-sun cells. Recent progress peak efficiencies metal-wrap-through architecture called AP-MWT 21.1 % two suns passivated emitter rear device over 20 % between five twelvesuns featuring full area, Al alloyed contact rear.