Investigation of optical and concentration profile changes of InGaNAs/GaAs heterostructures induced by thermal annealing
作者： Robert Imlau , Knut Müller , Oleg Rubel , Rafael Fritz , Marco Schowalter
DOI: 10.1088/1742-6596/326/1/012038
关键词: Band gap 、 Analytical chemistry 、 Materials science 、 Heterojunction 、 Ion milling machine 、 Blueshift 、 Annealing (metallurgy) 、 Microscope 、 Ion 、 Indium
摘要: In this contribution we compare optical and structural properties of In0.2Ga0.8N0.024As0.976 quantum wells before after annealing at 550 °C 600 in an N2 atmosphere. We measure strain chemically sensitive contrast to determine local indium nitrogen concentrations using a TEM 3-beam image formed by the 000, 220 200 beams. For quantification Bloch wave simulations are used, which include bonding static atomic displacements. The samples were grown metal-organic vapour phase epitaxy, prepared with focused ion beams (FIB), thinned low energy milling investigated Cs-corrected Titan 80/300 microscope L-shaped objective aperture. Imaging conditions Laue circle centre (0 4.2 0) used as they show weak dependence on lamella thickness. Absorption measurements blueshift band gap 19 ± 7meV (550 °C) 36 7 meV (600 annealing. average concentration was found be 2±1% is unaffected temperature. contrast, mean appears decrease from 18.5 2% 15 1% Together blueshift, observation discussed terms modification electron structure factors, caused preferred coordination N atoms.
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