Conduction type of nonstoichiometric alloy semiconductor CuxZnyS deposited by the photochemical deposition method
作者： Masaya Ichimura , Yosuke Maeda
DOI: 10.1016/J.TSF.2015.04.071
关键词: Auger electron spectroscopy 、 Alloy 、 Band gap 、 Irradiation 、 Substrate (electronics) 、 Semiconductor 、 Thermal conduction 、 Analytical chemistry 、 Deposition (chemistry) 、 Materials science
摘要: Abstract Cu x Zn y S films with low content were deposited by photochemical deposition, and the relation between conduction type was investigated. The deposition solution for similar to that ZnS (1 mM ZnSO 4 , 600 mM Na 2 O 3 3 mM SO ), addition of CuSO . substrate held 2–3 mm below surface irradiated an Hg-arc lamp. transparent in visible range had a band gap about 3.6–3.8 eV. composition evaluated Auger electron spectroscopy (AES), determined photoelectrochemical (PEC) measurements. Clear p-type signals observed PEC measurements concentrations higher than 0.3 mM, whereas n-type lower 0.05 mM. critical film at transition detection limit AES thus estimated extrapolating results concentrations. We changed around 0.5%–1% this alloy system.
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