The effect of copper concentration on structural, optical and dielectric properties of CuxZn1 − xS thin films
作者： M Ali Yıldırım , None
DOI: 10.1016/J.OPTCOM.2011.10.062
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摘要: Abstract Cu x Zn 1 − S ( = 0, 0.25, 0.50, 0.75, 1) thin films were deposited on glass substrates using Successive Ionic Layer Adsorption and Reaction (SILAR) method at room temperature ambient pressure. The copper concentration ) effect the structural, morphological optical properties of was investigated. X-ray diffraction (XRD) scanning electron microscopy (SEM) studies showed that all exhibit polycrystalline nature are covered well with substrates. crystalline surface improved increasing concentration. energy bandgap values changed from 2.07 to 3.67 eV depending refractive index n ), static high frequency dielectric constants e o , ∞ calculated by as a function
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