作者: A. R. James , Chandra Prakash
DOI: 10.1063/1.1646751
关键词: Analytical chemistry 、 Electrical resistivity and conductivity 、 Dielectric 、 Hysteresis 、 Thin film 、 Carbon film 、 Materials science 、 Ferroelectricity 、 Pulsed laser deposition 、 Torr
摘要: Thin films of Ba(Zr0.15Ti0.85)O3 were crystallized in situ at several different oxygen background pressures and temperatures. The optimal temperature pressure for obtaining with smooth surface morphology good electrical properties was found to be 675 °C 300 mTorr, respectively. Films grown this have a Pr 3.31 μC/cm2 an Ec 93.5 kV/cm. Low field dielectric measurements C-V performed order study the behavior films. A tunability ∼45% recorded on