Ferroelectric properties of pulsed laser deposited Ba(Zr0.15Ti0.85)O3 thin films

作者: A. R. James , Chandra Prakash

DOI: 10.1063/1.1646751

关键词: Analytical chemistryElectrical resistivity and conductivityDielectricHysteresisThin filmCarbon filmMaterials scienceFerroelectricityPulsed laser depositionTorr

摘要: Thin films of Ba(Zr0.15Ti0.85)O3 were crystallized in situ at several different oxygen background pressures and temperatures. The optimal temperature pressure for obtaining with smooth surface morphology good electrical properties was found to be 675 °C 300 mTorr, respectively. Films grown this have a Pr 3.31 μC/cm2 an Ec 93.5 kV/cm. Low field dielectric measurements C-V performed order study the behavior films. A tunability ∼45% recorded on

参考文章(5)
Zhi Yu, Ruyan Guo, AS Bhalla, None, Dielectric behavior of Ba(Ti1-xZrx)O3 single crystals Journal of Applied Physics. ,vol. 88, pp. 410- 415 ,(2000) , 10.1063/1.373674
Zhi Yu, Chen Ang, Ruyan Guo, A. S. Bhalla, Ferroelectric-relaxor behavior of Ba(Ti0.7Zr0.3)O3 ceramics Journal of Applied Physics. ,vol. 92, pp. 2655- 2657 ,(2002) , 10.1063/1.1495069
Ulrich Weber, Georg Greuel, Ulrich Boettger, Sophie Weber, Detlev Hennings, Rainer Waser, Dielectric properties of Ba(Zr, Ti)O3-based ferroelectrics for capacitor applications Journal of the American Ceramic Society. ,vol. 84, pp. 759- 766 ,(2001) , 10.1111/J.1151-2916.2001.TB00738.X
Paul W. Rehrig, Seung-Eek Park, Susan Trolier-McKinstry, Gary L. Messing, Beth Jones, Thomas R. Shrout, Piezoelectric properties of zirconium-doped barium titanate single crystals grown by templated grain growth Journal of Applied Physics. ,vol. 86, pp. 1657- 1661 ,(1999) , 10.1063/1.370943
D. HENNINGS, A. SCHNELL, G. SIMON, Diffuse Ferroelectric Phase Transitions in Ba(Ti1-yZry)O3 Ceramics Journal of the American Ceramic Society. ,vol. 65, pp. 539- 544 ,(1982) , 10.1111/J.1151-2916.1982.TB10778.X