3d structured non-volatile memory device and method for manufacturing the same
作者： Kim Beom Yong , Lee Ki Hong , Lee Kee Jeung , Hong Kwon
DOI:
关键词: Substrate (printing) 、 Communication channel 、 Process (computing) 、 Materials science 、 Optoelectronics 、 Non-volatile memory 、 Etching (microfabrication) 、 Layer (electronics) 、 Line (electrical engineering)
摘要: PURPOSE: A non-volatile memory device of a three dimensional structure and manufacturing method thereof are provided to prevent selection gate line be eliminated in the etching process for word separation by forming an L-shape formed on side wall channel. CONSTITUTION: plurality first channels(21) is projected from substrate. The channels arranged directions(I-I') second directions(II-II') crossing with directions. gate(20) L shape sidewall each insulating layer(23) surrounds placed between channel gate. layer buried central zone channels.
lens.org 参考文章(6)
Jeong-hee Han, Ju-Hyung Kim, Chung-woo Kim, Sang-Hun Jeon, Youn-seok Jeong, Seung-Hyun Lee, Nonvolatile memory device and method of fabricating the same ,(2006)
Megumi Ishiduki, Masaru Kidoh, Ryota Katsumata, Hideaki Aochi, Yosuke Komori, Yoshiaki Fukuzumi, Hiroyasu Tanaka, Masaru Kito, Non-volatile semiconductor storage device and method of manufacturing the same ,(2009)
Hideaki Aochi, Hideyuki Nishizawa, Koji Asakawa, Tsukasa Tada, Yoshiaki Fukuzumi, Shigeki Hattori, Satoshi Mikoshiba, Reika Ichihara, Hiroyuki Fuke, Masaya Terai, Nonvolatile semiconductor memory device and method for manufacturing same ,(2010)
Seo Dae Young, METHOD FOR FABRICATING CHARGE TRAP TYPE NONVOLATILE MEMORY DEVICE WITH VERTICAL CELL ,(2010)
Seung Ho Pyi, Moon Sig Joo, Yong Soo Kim, Non-volatile Memory Device ,(2011)
Juri Kato, Nonvolatile semiconductor memory device and manufacturing method thereof ,(2006)