High-Quality varactors and Schottky-Diodes in SiGe:C Technology for mm-Wave and THz applications
作者： Olivier Tesson , Sidina Wane , Serge Bardy , Laure Rolland du Roscoat , Manohiaina Ranaivoniarivo
DOI: 10.1109/BCTM.2013.6798149
关键词: Parasitic capacitance 、 Topology (electrical circuits) 、 Cutoff frequency 、 Ka band 、 Schottky barrier 、 Schottky diode 、 Materials science 、 Voltage-controlled oscillator 、 Varicap 、 Optoelectronics
摘要: This paper presents the design and experimental characterization of High-Quality varactors Schottky Diodes in SiGe:C Technology. A new layout topology for differential varactor is proposed to significantly improve its quality factor up Ka band. addresses typical trade-off that designers often face between tuning range. 2x improvement 30 GHz over conventional made multi fingers demonstrated. On other side, special care has been taken minimize parasitic capacitance anodes keep range stable. Measured VCO with this type shows a reduction 2 dB Phase Noise at 1 MHz from carrier. Silicon-based arrays Cut-Off frequencies THz domain are designed fabricated. Concurrent optimization Diode geometry electrical performances (Cutoff frequency, parasitic, Quality-factor, Sensitivity, Responsiveness, etc.) carried out based on careful modeling characterizations. Analysis including sweep DC-biasing conditions control non-linearities studied. Detection mechanisms related non-linear behavior studied figures merit introduced their analysis.
sci-hub.se 参考文章(13)
M.R. Abdel-Rahman, F.J. González, G.D. Boreman, Antenna-coupled metal-oxide-metal diodes for dual-band detection at 92.5 GHz and 28 THz Electronics Letters. ,vol. 40, pp. 116- 118 ,(2004) , 10.1049/EL:20040105
Ruonan Han, Yaming Zhang, Dominique Coquillat, Hadley Videlier, Wojciech Knap, Elliott Brown, Kenneth K. O, A 280-GHz Schottky Diode Detector in 130-nm Digital CMOS IEEE Journal of Solid-state Circuits. ,vol. 46, pp. 2602- 2612 ,(2011) , 10.1109/JSSC.2011.2165234
J. A. Russer, F. Mukhtar, S. Wane, D. Bajon, P. Russer, Network model of coupled integrated antennas international conference on electromagnetics in advanced applications. pp. 956- 959 ,(2013) , 10.1109/ICEAA.2013.6632381
Hung-Ju Wei, Chinchun Meng, Ta-Wei Wang, Tai-Lin Lo, Chia-Ling Wang, 60-GHz Dual-Conversion Down-/Up-Converters Using Schottky Diode in 0.18 $\mu{\hbox {m}}$ Foundry CMOS Technology IEEE Transactions on Microwave Theory and Techniques. ,vol. 60, pp. 1684- 1698 ,(2012) , 10.1109/TMTT.2012.2189412
Ruonan Han, Yaming Zhang, Dominique Coquillat, Julie Hoy, Hadley Videlier, Wojciech Knap, Elliott Brown, Kenneth K. O, 280-GHz schottky diode detector in 130-nm digital CMOS custom integrated circuits conference. pp. 1- 4 ,(2010) , 10.1109/CICC.2010.5617387
P. Russer, J. A. Russer, F. Mukhtar, P. Lugli, S. Wane, D. Bajon, W. Porod, Integrated antennas for RF sensing, wireless communications and energy harvesting applications international workshop on antenna technology. pp. 1- 4 ,(2013) , 10.1109/IWAT.2013.6518285
Laurent Leyssenne, Sidina Wane, Sebastien Massenot, Damienne Bajon, Rosine Coq-Germanicus, Philippe Descamps, Guillaume Audoit, Electromagnetic modeling and experimental characterization of dielectric material and liquid properties from RF to THz international conference on electromagnetics in advanced applications. pp. 1032- 1035 ,(2013) , 10.1109/ICEAA.2013.6632399
Tae-Jong Baek, Dong-Sik Ko, Sang-Jin Lee, Yong-Hyun Baek, Min Han, Seok-Gyu Choi, Jae-Hyun Choi, Wan-Joo Kim, Jin-Koo Rhee, A Transceiver Module for FMCW Radar Sensors Using 94-GHz Dot-Type Schottky Diode Mixer IEEE Sensors Journal. ,vol. 11, pp. 370- 376 ,(2011) , 10.1109/JSEN.2010.2057419
S. Sankaran, K.K. O, Schottky barrier diodes for millimeter wave detection in a foundry CMOS process IEEE Electron Device Letters. ,vol. 26, pp. 492- 494 ,(2005) , 10.1109/LED.2005.851127
K.M. Strohm, J. Buechler, E. Kasper, SIMMWIC rectennas on high-resistivity silicon and CMOS compatibility IEEE Transactions on Microwave Theory and Techniques. ,vol. 46, pp. 669- 676 ,(1998) , 10.1109/22.668681