SIMMWIC rectennas on high-resistivity silicon and CMOS compatibility

作者: K.M. Strohm , J. Buechler , E. Kasper

DOI: 10.1109/22.668681

关键词:

摘要: Rectifying antennas (rectennas) are realized on high-resistivity silicon substrates using monolithic millimeter-wave integrated circuit (SIMMWIC) technology. Monolithically coplanar Schottky barrier diodes used as rectifying elements embedded in different antenna structures. Both p- and n-type with cutoff frequencies up to 1 THz. The rectennas combined a CMOS preamplifier mounted multichip module (MCM) next the rectenna substrate. An amplification of 32 dB is measured. Maximum sensitivity detector including preamplification 1600 mV/mW/spl middot/cm/sup -2/ at 94.6 GHz. For integration high-frequency circuits low-frequency control signal-processing electronics, circuitry discussed.

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