Enhanced programming and erasing speeds in p-channel charge-trapping flash transistor devices with SiGe channel
作者： Li-Jung Liu , Kuei-Shu Chang-Liao , Yi-Chuen Jian , Tien-Ko Wang , Ming-Jinn Tsai
DOI: 10.1109/ISDRS.2011.6135247
关键词: Optoelectronics 、 Trapping 、 Flash memory 、 Charge (physics) 、 Charge trap flash 、 Communication channel 、 Reliability (semiconductor) 、 Transistor 、 Flash (photography) 、 Materials science 、 Electrical engineering
摘要: P-channel charge-trapping flash transistor devices with different Ge contents in SiGe channel and thicknesses of Si 0.8 0.2 are investigated this work. Both programming erasing speeds significantly improved by employing comparison those Si-channel. Moreover, satisfactory retention endurance characteristics for device also achieved, which indicates the out-diffusion atoms from does not affect reliability properties memory devices.
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