Performance improvement of flash memories with HfOxNy∕SiO2 stack tunnel dielectrics
作者： Hsiang-Yueh Lai , Kuei-Shu Chang-Liao , Tien-Ko Wang , Ping-Kun Wang , Chin-Lung Cheng
DOI: 10.1116/1.2207153
关键词: Flash memory 、 Hafnium 、 Performance improvement 、 Dielectric 、 Optoelectronics 、 Charge retention 、 High-κ dielectric 、 Annealing (metallurgy) 、 Electrode 、 Materials science
摘要: The operating characteristics of flash memory devices with tunnel dielectrics comprising a hafnium oxynitride (HfOxNy) layer or oxynitride/silicon dioxide (HfOxNy∕SiO2) stack, annealed at various temperatures, were studied. present work indicates that HfOxNy∕SiO2 stack dielectric have higher program/erase speed and better reliability than those single HfOxNy layer. composed thick thin SiO2 exhibits an even performance in the operation. In addition, 850°C show best terms speed, charge retention, read disturbance.
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