Electrical and physical characteristics of metal–oxide–semiconductor structured nonvolatile memory with HfLaxTiyOz charge trapping layers
作者： Jin-Tsong Jeng , Yan-Lin Li , Chin-Lung Cheng
DOI: 10.1116/1.4978048
关键词: Oxide semiconductor 、 Materials science 、 Trapping 、 Optoelectronics 、 Metal 、 Nanotechnology 、 Annealing (metallurgy) 、 Non-volatile memory 、 Dielectric 、 Memory window 、 Charge loss
摘要: A HfLaxTiyOz film that embeds in a Hf2La2O7 dielectric has been presented as the charge trapping layer (CTL) of metal–oxide–semiconductor (MOS) structures for nonvolatile memory (NVM). First, physical and electrical characteristics MOS NVM with CTLs treated at various postdeposition annealing conditions are examined. Then, reliability properties, including hysteresis windows, programming/erasing (P/E) time, endurance, retention structures, Ti O contents incorporated into CTLs, investigated. The results indicate 2.7 V window is achieved by scanning over range ±7 V. density trap states estimated to be 2.03 ± 0.06 × 1013 cm−2 during C–V sweep ±7 V CTL. Better namely, small narrowing after 104 P/E cycles 7% loss 10 years, demonstrated CTL with...
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