Metal–Oxide–High- $k$ -Oxide–Silicon Memory Device Using a Ti-Doped $\hbox{Dy}_{2}\hbox{O}_{3}$ Charge-Trapping Layer and $\hbox{Al}_{2}\hbox{O}_{3}$ Blocking Layer
作者： Fa-Hsyang Chen , Tung-Ming Pan , Fu-Chien Chiu
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摘要: In this paper, we propose Al/SiO2/Dy2O3/ SiO2/ Si, Al/SiO2/DyTixOy/SiO2/Si, and Al/Al2O3/DyTixOy/SiO2/Si as charge-trapping memory devices incorporating high-k Dy2O3 Ti-doped films layers, SiO2 Al2O3 blocking layers. The Al/Al2O3/DyTix Oy/ SiO2/Si device exhibited a larger window of ~4.5 V (measured at sweep voltage range ±9 V), smaller charge loss ~20% time up to 106s 85°C), better endurance (program/erase cycles 104) than other devices. These results suggest higher probability for trapping the carrier due Ti content in film, which produce high dielectric constant suppress formation Dy-silicate layer, create deep trap level DyTixOy film.
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sci-hub.se 参考文章(21)
R. Ludeke, M. T. Cuberes, E. Cartier, Local transport and trapping issues in Al2O3 gate oxide structures Applied Physics Letters. ,vol. 76, pp. 2886- 2888 ,(2000) , 10.1063/1.126506
Sanghun Jeon, Hyunsang Hwang, Effect of hygroscopic nature on the electrical characteristics of lanthanide oxides (Pr2O3, Sm2O3, Gd2O3, and Dy2O3) Journal of Applied Physics. ,vol. 93, pp. 6393- 6395 ,(2003) , 10.1063/1.1569028
Fu-Chien Chiu, Electrical characterization and current transportation in metal∕Dy2O3∕Si structure Journal of Applied Physics. ,vol. 102, pp. 044116- ,(2007) , 10.1063/1.2767380
Chang-Hyun Lee, Sung-Hoi Hur, You-Cheol Shin, Jeong-Hyuk Choi, Dong-Gun Park, Kinam Kim, Charge-trapping device structure of SiO2∕SiN∕high-k dielectric Al2O3 for high-density flash memory Applied Physics Letters. ,vol. 86, pp. 152908- ,(2005) , 10.1063/1.1897431
H. Y. Yu, M. F. Li, B. J. Cho, C. C. Yeo, M. S. Joo, D.-L. Kwong, J. S. Pan, C. H. Ang, J. Z. Zheng, S. Ramanathan, Energy gap and band alignment for (HfO2)x(Al2O3)1−x on (100) Si Applied Physics Letters. ,vol. 81, pp. 376- 378 ,(2002) , 10.1063/1.1492024
Tzu-Hsiang Hsu, Hsin-Chiang You, Fu-Hsiang Ko, Tan-Fu Lei, PolySi-SiO2-ZrO2-SiO2-Si Flash Memory Incorporating a Sol-Gel-Derived ZrO2 Charge Trapping Layer Journal of The Electrochemical Society. ,vol. 153, ,(2006) , 10.1149/1.2337846
L. Fleming, C. C. Fulton, G. Lucovsky, J. E. Rowe, M. D. Ulrich, J. Lüning, Local bonding analysis of the valence and conduction band features of TiO2 Journal of Applied Physics. ,vol. 102, pp. 033707- ,(2007) , 10.1063/1.2764004
Benjamin J. Morgan, Graeme W. Watson, Polaronic trapping of electrons and holes by native defects in anatase TiO2 Physical Review B. ,vol. 80, pp. 233102- ,(2009) , 10.1103/PHYSREVB.80.233102
T. Schroeder, G. Lupina, J. Dabrowski, A. Mane, Ch. Wenger, G. Lippert, H.-J. Müssig, Titanium-added praseodymium silicate high-k layers on Si(001) Applied Physics Letters. ,vol. 87, pp. 022902- ,(2005) , 10.1063/1.1978978
Yu-Hsien Lin, Chao-Hsin Chien, Tsung-Yuan Yang, Tan-Fu Lei, Two-Bit Lanthanum Oxide Trapping Layer Nonvolatile Flash Memory Journal of The Electrochemical Society. ,vol. 154, ,(2007) , 10.1149/1.2737345