A thermopile based SOI CMOS MEMS wall shear stress sensor
作者： A. De Luca , I. Haneef , J. Coull , S. Z. Ali , C. Falco
DOI: 10.1109/SMICND.2013.6688088
关键词: Silicon oxide 、 Constant current 、 Shear stress 、 Electrical engineering 、 Thermopile 、 Materials science 、 Deep reactive-ion etching 、 Silicon on insulator 、 CMOS 、 Microelectromechanical systems 、 Optoelectronics
摘要: In this paper we present for the first time, a novel silicon on insulator (SOI) complementary metal oxide semiconductor (CMOS) MEMS thermal wall shear stress sensor based tungsten hot-film and three thermopiles. These devices have been fabricated using commercial 1 μm SOI-CMOS process followed by deep reactive ion etch (DRIE) back-etch step to create membranes under effective isolation. The sensors show an excellent repeatability of electro-thermal characteristics can be used measure in both constant current anemometric as well calorimetric modes. calibrated measurement air range 0-0.48 Pa suction type, 2-D flow wind tunnel. calibration results that higher sensitivity (up four times) mode compared lower than 0.3 Pa.
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