On the Seebeck Coefficient and Its Temperature Dependence for Standard CMOS Materials

摘要: This paper presents an extensive experimental study of the Seebeck coefficients in several conductive materials offered by standard CMOS technology when subject to a high temperature gradient. The measurements have been carried out on specific devices designed and fabricated high-temperature SOI technology, comprising: one heating element, thermopiles with different combinations materials, two highly sensitive, low leakage diodes used calibrate absolute points structure. To increase accuracy, chip characterization is performed controlled chamber, values environmental range 20 °C 40 °C. analysis leads extraction relative for all thermocouples made and, from that, various at temperature.