Resistivity‐Dopant Density Relationship for Phosphorus‐Doped Silicon

摘要: New data for the resistivity‐dopant density relationship for phosphorus‐doped silicon have been obtained for phosphorus densities between 10 13 and 10 20 cm− 3 and temperatures of 296 K (23 C) and 300 K. For dopant densities less than 10 18 cm− 3, results were calculated from resistivity and junction capacitance‐voltage measurements on processed wafers. For more heavily doped material, data were obtained from Hall effect and resistivity measurements on specimens cut from bulk silicon slices. The results differ by 5–15% from …