Chapter 7 Neutralization of Donor Dopants and Formation of Hydrogen-Induced Defects in n-Type Silicon

摘要: Publisher Summary This chapter reviews two hydrogen-related phenomena that have been predominantly observed in n -type silicon. The first is hydrogen (H) neutralization of shallow-donor impurities, which was reported 1986. Prior to this, it generally accepted H could passivate only shallow-acceptor dopants silicon (Si), addition deep-level impurities. Spectroscopic confirmation the existence donor-hydrogen complexes soon obtained from infrared absorption measurements. Since report, several studies confirmed experimentally phenomenon donor dopants, and theoretical verified (specifically, qualitative features of) novel microscopic model discussed for donor–hydrogen complex. presents a review on kinetics thermal dissociation complex, establishes negative charge state migrating as well yielding activation energy (1.2 eV) dissociation. also discusses hydrogen-induced defects experimental evidence strongly supports conclusion hydrogen, diffused into single-crystal at moderate temperatures (for example, I50°C), can generate extended electrically-active are unrelated either plasma or radiation damage.