Hydrogen-Nitrogen Tailors Semiconductor Optoelectronics: The Case of Dilute Nitride III-V Alloys

摘要: Hydrogen is an omnipresent impurity in semiconductors, often associated with other impurities and native defects, strongly affecting their electronic properties by passivating deep shallow levels, or activating isoelectronic centers, can be intentionally unintentionally incorporated. On the hand, nitrogen has profound effects on structure of conventional III-V compounds: just a few percent N drastically lower band gap GaAs making it suitable for long-wavelength optical devices; isovalent doping GaP leads to quasidirect enhanced functionality. The large difference electronegativity between group V elements expected couple high chemical activity H, raising crucial questions about behavior H dilute nitride alloys that theories hydrogen semiconductors commom-anion nitrides are unable answer. Here we show qualitatively alter hydrogen: In GaAsN, atom bonds act as donor its own right, whereas GaN, amphoteric; Nitrogen also stabilizes % MathType!MTEF!2!1!+- feaagKart1ev2aaatCvAUfeBSjuyZL2yd9gzLbvyNv2CaerbuLwBLn hiov2DGi1BTfMBaeXatLxBI9gBaerbd9wDYLwzYbItLDharqqtubsr 4rNCHbGeaGqiVu0Je9sqqrpepC0xbbL8F4rqqrFfpeea0xe9Lq-Jc9 vqaqpepm0xbba9pwe9Q8fs0-yqaqpepae9pg0FirpepeKkFr0xfr-x fr-xb9adbaqaaeGaciGaaiaabeqaamaabaabaaGcbaGaaeisamaaDa aaleaacaaIYaaabaGaaiOkaaaaaaa!3858! $${\text{H}}_2^*$$ complex, otherwise unstable against formation interstitial H2 molecules, reversing effect GaAs, allowing us interpret several recent experiments.