Hydrogen Passivation and Reactivation of DX Centers in Se-Doped and Si-Doped AlGaAs - - A Comparison

摘要: The effect of hydrogenation on DX centers was evaluated for both Si- and Se-doped AlxGa1−xAs (x=0.26 0.23). MBE-grown AlGaAs:Si MOCVD-grown AIGaAs:Se epilayers were hydrogenated with either monatomic hydrogen or deuterium from a remote plasma at 250°C lh. passivation subsequent reactivation kinetics studied C-V DLTS techniques. Reactivation investigated in the space-charge layer Schottky diodes under different bias conditions. While Group VI IV deep donors respond similarly to passivation, they display significantly kinetics, thermal dissociation energies 1.5 eV 1.2 Se-H Si-H, respectively. These values are close previously determined Si Se shallow AlGaAs GaAs. Therefore, not dependent Al concentration (x ≤ 0.30) even residing As sublattice. Our results consistent Chang-Chadi model centers.