Hydrogen passivation of nonradiative defects in InGaAs/AlxGa1−xAs quantum wells
作者： S. M. Lord , G. Roos , J. S. Harris , N. M. Johnson
DOI: 10.1063/1.353331
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摘要: The effects of diffusion monatomic hydrogen and deuterium in InGaAs/AlGaAs quantum wells were studied using photoluminescence (PL) secondary‐ion‐mass spectroscopy. multiquantum‐well structures grown by molecular‐beam epitaxy hydrogenated with a remote plasma. A significant increase 77 K PL integrated intensity bound excitons was observed after hydrogenation. This is attributed to the passivation nonradiative recombination centers within wells. series studies demonstrating efficiency increasing Al concentration barriers, stability hydrogenation upon annealing temperatures up above 450 °C, ratio for samples different barrier thicknesses, comparison strained versus relaxed wells, all strongly suggest that passivated are interface defects. this at temperatur...
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