Deuterium in InGaAs/GaAs strained quantum wells: an optically active impurity
作者： M Capizzi , A Polimeni , B Bonanni , V Emiliani , A Frova
DOI: 10.1088/0268-1242/9/12/012
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摘要: Low-temperature photoluminescence in InGaAs/GaAs strained quantum wells shows the appearance, upon deuterium irradiation, of two bands at energies below heavy-hole free exciton. The deeper band is due to recombination a impurity (or deuterium-defect complex), while shallower attributed an exciton bound deuterium-related state. binding these depend on alloy composition and well width show maximum for finite values as expected by theoretical calculations. absence samples irradiated with helium that are related atoms rather than centres irradiation procedure. Thermal annealing treatments indicate dissociation energy radiative state comparable measured GaAs complexes formed deep traps.
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