Photoluminescence study of undoped and modulation-doped pseudomorphic AlyGa1-yAs/InxGa1-xAS/AlyGa1-yAs single quantum wells.
作者： P. B. Kirby , J. A. Constable , R. S. Smith
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摘要: On utilise la photoluminescence pour decrire le processus de recombinaisant dominant dans les puits quantiques uniques GaAs (Iu x Ga 1-x As/GaAs pseudo-morphique non dope, x<0,17. n'observe aucune preuve des fluctuations monocouche malgre haute qualite optique caracteristique excitoniques. identifie sans equivoque spectres d'absorption excitoniques a pics avec transitions impliquant etats trous legers. Des comparaisons d'energies calculs niveaux confines, incluant contraintes, suggerent que l'etat legers n'est par confine puit In As
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sci-hub.se 参考文章(20)
R. L. S. Devine, W. T. Moore, Effect of interface structure on photoluminescence of InGaAs/GaAs pseudomorphic single quantum wells Journal of Applied Physics. ,vol. 62, pp. 3999- 4001 ,(1987) , 10.1063/1.339205
S. B. Ogale, A. Madhukar, F. Voillot, M. Thomsen, W. C. Tang, T. C. Lee, J. Y. Kim, P. Chen, Atomistic nature of heterointerfaces in III-V semiconductor-based quantum-well structures and its consequences for photoluminescence behavior. Physical Review B. ,vol. 36, pp. 1662- 1672 ,(1987) , 10.1103/PHYSREVB.36.1662
R. C. Miller, A. C. Gossard, G. D. Sanders, Yia-Chung Chang, J. N. Schulman, New evidence of extensive valence-band mixing in GaAs quantum wells through excitation photoluminescence studies. Physical Review B. ,vol. 32, pp. 8452- 8454 ,(1985) , 10.1103/PHYSREVB.32.8452
J. Menéndez, A. Pinczuk, D. J. Werder, S. K. Sputz, R. C. Miller, D. L. Sivco, A. Y. Cho, Large valence-band offset in strained-layer InxGa Physical Review B. ,vol. 36, pp. 8165- 8168 ,(1987) , 10.1103/PHYSREVB.36.8165
T. G. Andersson, Z. G. Chen, V. D. Kulakovskii, A. Uddin, J. T. Vallin, Photoluminescence and photoconductivity measurements on band-edge offsets in strained molecular-beam-epitaxy-grown InxGa Physical Review B. ,vol. 37, pp. 4032- 4038 ,(1988) , 10.1103/PHYSREVB.37.4032
Gerald Burns, C. R. Wie, F. H. Dacol, G. D. Pettit, J. M. Woodall, Phonon shifts and strains in strain‐layered (Ga1−xInx)As Applied Physics Letters. ,vol. 51, pp. 1919- 1921 ,(1987) , 10.1063/1.98300
P. B. Kirby, M. B. Simpson, J. D. Wilcox, R. S. Smith, T. M. Kerr, B. A. Miller, C. E. C. Wood, Photoluminescence study on undoped single quantum well pseudomorphic structures Applied Physics Letters. ,vol. 53, pp. 2158- 2160 ,(1988) , 10.1063/1.100304
J. Y. Emery, A. Chomette, B. Lambert, M. Baudet, B. Deveaud, Observation of one‐monolayer size fluctuations in a GaAs/GaAlAs superlattice Applied Physics Letters. ,vol. 45, pp. 1078- 1080 ,(1984) , 10.1063/1.95021
R. C. Miller, D. A. Kleinman, A. C. Gossard, O. Munteanu, Biexcitons in GaAs quantum wells Physical Review B. ,vol. 25, pp. 6545- 6547 ,(1982) , 10.1103/PHYSREVB.25.6545
Y. Nomura, K. Shinozaki, M. Ishii, Bound excitons in Si‐doped GaAs/Al0.22Ga0.78As single quantum wells Journal of Applied Physics. ,vol. 58, pp. 1864- 1866 ,(1985) , 10.1063/1.336015