Effect of interface structure on photoluminescence of InGaAs/GaAs pseudomorphic single quantum wells
作者： R. L. S. Devine , W. T. Moore
DOI: 10.1063/1.339205
关键词:
摘要: Photoluminescence studies have been carried out on InGaAs pseudomorphic single quantum wells grown GaAs by molecular beam epitaxy. Linewidths as narrow 2.0 meV observed. The spectra typically consist of two peaks which certain samples can be explained intrawell thickness variations one monolayer. On other the results are more consistent with exciton trapping at islands having a smaller lateral extent than Bohr radius.
scitation.org
harvard.edu
aip.org
sci-hub.se 参考文章(14)
D. V. Morgan, H. Ohno, C. E. C. Wood, L. F. Eastman, J. D. Berry, Ion Beam Analysis of Molecular Beam Epitaxy InAlAs / InGaAs Layer Structures Journal of The Electrochemical Society. ,vol. 128, pp. 2419- 2424 ,(1981) , 10.1149/1.2127262
D Bimberg, D Mars, JN Miller, R Bauer, D Oertel, None, Structural changes of the interface, enhanced interface incorporation of acceptors, and luminescence efficiency degradation in GaAs quantum wells grown by molecular beam epitaxy upon growth interruption Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. ,vol. 4, pp. 1014- 1021 ,(1986) , 10.1116/1.583572
C. Weisbuch, R. Dingle, A.C. Gossard, W. Wiegmann, Optical characterization of interface disorder in GaAs-Ga1-xAlxAs multi-quantum well structures Solid State Communications. ,vol. 38, pp. 709- 712 ,(1981) , 10.1016/0038-1098(81)90401-4
G. Bastard, C. Delalande, M. H. Meynadier, P. M. Frijlink, M. Voos, Low-temperature exciton trapping on interface defects in semiconductor quantum wells Physical Review B. ,vol. 29, pp. 7042- 7044 ,(1984) , 10.1103/PHYSREVB.29.7042
T. -C. Chiang, R. Ludeke, D. E. Eastman, Photoemission studies of Al x Ga 1-x As (100) surfaces grown by molecular-beam epitaxy Physical Review B. ,vol. 25, pp. 6518- 6521 ,(1982) , 10.1103/PHYSREVB.25.6518
R. C. Miller, C. W. Tu, S. K. Sputz, R. F. Kopf, Photoluminescence studies of the effects of interruption during the growth of single GaAs/Al0.37Ga0.63As quantum wells Applied Physics Letters. ,vol. 49, pp. 1245- 1247 ,(1986) , 10.1063/1.97427
C. Delalande, M. H. Meynadier, M. Voos, Effect of temperature on exciton trapping on interface defects in GaAs quantum wells. Physical Review B. ,vol. 31, pp. 2497- 2498 ,(1985) , 10.1103/PHYSREVB.31.2497
D. A. Kleinman, Binding energy of biexcitons and bound excitons in quantum wells Physical Review B. ,vol. 28, pp. 871- 879 ,(1983) , 10.1103/PHYSREVB.28.871
D. C. Reynolds, K. K. Bajaj, C. W. Litton, Jasprit Singh, P. W. Yu, P. Pearah, J. Klem, H. Morkoc, High-resolution photoluminescence and reflection studies of GaAs-AlxGa1-xAs multi-quantum-well structures grown by molecular-beam epitaxy: Determination of microscopic structural quality of interfaces. Physical Review B. ,vol. 33, pp. 5931- 5934 ,(1986) , 10.1103/PHYSREVB.33.5931
J. Y. Emery, A. Chomette, B. Lambert, M. Baudet, B. Deveaud, Observation of one‐monolayer size fluctuations in a GaAs/GaAlAs superlattice Applied Physics Letters. ,vol. 45, pp. 1078- 1080 ,(1984) , 10.1063/1.95021