High-resolution photoluminescence and reflection studies of GaAs-AlxGa1-xAs multi-quantum-well structures grown by molecular-beam epitaxy: Determination of microscopic structural quality of interfaces.
作者： D. C. Reynolds , K. K. Bajaj , C. W. Litton , Jasprit Singh , P. W. Yu
关键词:
摘要:
harvard.edu
sci-hub.se 参考文章(11)
C. Weisbuch, R. Dingle, A.C. Gossard, W. Wiegmann, Optical characterization of interface disorder in GaAs-Ga1-xAlxAs multi-quantum well structures Solid State Communications. ,vol. 38, pp. 709- 712 ,(1981) , 10.1016/0038-1098(81)90401-4
C. Weisbuch, R. Dingle, P. M. Petroff, A. C. Gossard, W. Wiegmann, Dependence of the structural and optical properties of GaAs‐Ga1−xAlxAs multiquantum‐well structures on growth temperature Applied Physics Letters. ,vol. 38, pp. 840- 842 ,(1981) , 10.1063/1.92212
Leon Goldstein, Yoshiji Horikoshi, Seigo Tarucha, Hiroshi Okamoto, Effect of Well Size Fluctuation on Photoluminescence Spectrum of AlAs–GaAs Superlattices Japanese Journal of Applied Physics. ,vol. 22, pp. 1489- 1492 ,(1983) , 10.1143/JJAP.22.1489
J. Y. Emery, A. Chomette, B. Lambert, M. Baudet, B. Deveaud, Observation of one‐monolayer size fluctuations in a GaAs/GaAlAs superlattice Applied Physics Letters. ,vol. 45, pp. 1078- 1080 ,(1984) , 10.1063/1.95021
B. Deveaud, J.Y. Emery, A. Chomette, B. Lambert, M. Baudet, Single monolayer well size fluctuations in the luminescence of GaAs-GaAlAs superlattices Superlattices and Microstructures. ,vol. 1, pp. 205- 208 ,(1985) , 10.1016/0749-6036(85)90004-7
D. C. Reynolds, K. K. Bajaj, C. W. Litton, P. W. Yu, Jasprit Singh, W. T. Masselink, R. Fischer, H. Morkoç, Determination of interfacial quality of GaAs‐GaAlAs multi‐quantum well structures using photoluminescence spectroscopy Applied Physics Letters. ,vol. 46, pp. 51- 53 ,(1985) , 10.1063/1.95848
Hiroyuki Sakaki, Masaaki Tanaka, Junji Yoshino, One Atomic Layer Heterointerface Fluctuations in GaAs-AlAs Quantum Well Structures and Their Suppression by Insertion of Smoothing Period in Molecular Beam Epitaxy Japanese Journal of Applied Physics. ,vol. 24, pp. L417- L420 ,(1985) , 10.1143/JJAP.24.L417
T. Hayakawa, T. Suyama, K. Takahashi, M. Kondo, S. Yamamoto, S. Yano, T. Hijikata, Interface disorder in GaAs/AlGaAs quantum wells grown by molecular beam epitaxy at high substrate temperature Applied Physics Letters. ,vol. 47, pp. 952- 954 ,(1985) , 10.1063/1.95940
Ya Li Sun, W. T. Masselink, R. Fischer, M. V. Klein, H. Morkoc̢, K. K. Bajaj, Influence of arsenic species and growth temperature on the properties of GaAs/(Al,Ga)As superlattices grown by molecular beam epitaxy Journal of Applied Physics. ,vol. 55, pp. 3554- 3557 ,(1984) , 10.1063/1.332945
D. C. Reynolds, K. K. Bajaj, C. W. Litton, E. B. Smith, Identification of residual donors in high-purity epitaxial GaAs with the use of magneto-optical spectroscopy Physical Review B. ,vol. 28, pp. 3300- 3305 ,(1983) , 10.1103/PHYSREVB.28.3300