Room‐ and low‐temperature assessment of pseudomorphic AlGaAs/InGaAs/GaAs high‐electron‐mobility transistor structures by photoluminescence spectroscopy

摘要: The use of room‐ and low‐temperature photoluminescence (PL) spectroscopy for the assessment n‐type pseudomorphic AlGaAs/InGaAs/GaAs high‐electron‐mobility transistor structures is reported. We describe a method to determine InAs mole fraction x, channel layer thickness L, confined two‐dimensional electron gas density (ns), based on comparison between PL transitions recombination energies derived from self‐consistent calculations subband structure. A detailed analysis optical their dependence Fermi level position temperature performed. It shown that, in real devices, high sensitivity intensities small changes parameters ns allows us detect deviations nominal structural within uncertainty molecular beam epitaxy growth technique. present procedure has been applied significant number samples, it backe...