Determination of energy‐band dispersion curves in strained‐layer structures
作者： E. D. Jones , S. K. Lyo , I. J. Fritz , J. F. Klem , J. E. Schirber
DOI: 10.1063/1.101367
关键词: Electronic band structure 、 Superlattice 、 Quantum well 、 Electronic structure 、 Chemistry 、 Valence (chemistry) 、 Band gap 、 Photoluminescence 、 Effective mass (solid-state physics) 、 Condensed matter physics
摘要: Simultaneous measurement of both the conduction‐ and valence‐band dispersion curves in single strained‐layer structures is presented. These measurements rely on application recent observations regarding breaking usual selection rules for interband magnetoluminescence transitions modulation‐doped structures. Low‐temperature magneto‐luminescence data three representative InGaAs/GaAs n‐type single‐strained quantum well are For energies approaching 50 meV above band gap, we find that conduction parabolic with an effective mass 0.071m0. Over same energy range, valence bands highly nonparabolic.
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