作者: S. K. Lyo , E. D. Jones , J. F. Klem
DOI: 10.1103/PHYSREVLETT.61.2265
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摘要: We present experimental and theoretical evidence for impurity-assisted off-diagonal (i.e., ..delta..n>0) transitions between conduction- valence-band Landau levels (n = 0,1,. . ) magnetoluminescence in modulation-doped degenerate semiconductor quantum wells. This new selection rule is employed to determine simultaneously the optical effective masses of electrons in-plane light holes n-type strained GaAs/InGaAs/AlGaAs