Influence of delta‐doping profile and interface roughness on the transport properties of pseudomorphic heterostructures
作者： S. Fernández de Avila , J. L. Sánchez‐Rojas , F. González‐Sanz , E. Calleja , E. Muñoz
DOI: 10.1063/1.110992
关键词:
摘要: Thickness effects of the InGaAs channel on photoluminescence and transport properties δ‐doped Al0.3Ga0.7As/In0.3Ga0.7As heterostructures are investigated. The spreading Si δ‐doping layer is deduced from a comparison measured charge with self‐consistent calculations assuming Gaussian distribution profile definite ionization probability Si‐related DX centers. With decreasing thickness below 80 A, effect sheet carrier concentration increases low temperature mobility decreases due to roughness scattering at In0.3Ga0.7As/GaAs interface. In channels thicker than A thickness‐independent alloy process dominates.
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