Reduction of Low-Temperature Nonlinearities in Pseudomorphic AlGaAs/InGaAs HEMTs Due to Si-Related DX Centers
作者： B. J. Skromme , A. Sasikumar , Bruce M. Green , O. L. Hartin , Charles E. Weitzel
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摘要: The linearity of conventional pseudomorphic AlGaAs/InGaAs/AlGaAs high-electron mobility transistors with planar doping in the AlGaAs layers is shown to degrade at low temperatures down -40°C, as measured by adjacent-channel power ratio under wideband code-division multiple-access modulation. A modified structure, which Si are placed within thin single GaAs quantum wells inside barrier layers, eliminates this degradation. Deep-level transient spectroscopy and persistent photocapacitance measurements show that trapping on DX centers effectively eliminated. improvements therefore attributed elimination trapping. Self-consistent solutions Schro?dinger Poisson equations transfer donor electrons into channel essentially same structures.
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