Interface roughness scattering in GaAs/AlAs quantum wells
作者： H. Sakaki , T. Noda , K. Hirakawa , M. Tanaka , T. Matsusue
DOI: 10.1063/1.98305
关键词:
摘要: We study experimentally and theoretically the influence of interface roughness on mobility two‐dimensional electrons in modulation‐doped AlAs/GaAs quantum wells. It is shown that scattering dominant mechanism thin wells with a well thickness Lw<60 A, where electron mobilities are proportional to L6w, reaching 2×103 cm2/V s at Lw∼55 A. From detailed comparison between theory experiment, it determined ‘‘GaAs‐on‐AlAs’’ grown by molecular beam epitaxy has height 3–5 A lateral size 50–70
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sci-hub.se 参考文章(10)
M. Tanaka, H. Sakaki, Atomistic models of interface structures of GaAs-AlxGa1−xAs (x = 0.2−1) quantum wells grown by interrupted and uninterrupted MBE Journal of Crystal Growth. ,vol. 81, pp. 153- 158 ,(1987) , 10.1016/0022-0248(87)90383-6
A. Hartstein, T.H. Ning, A.B. Fowler, Electron scattering in silicon inversion layers by oxide and surface roughness Surface Science. ,vol. 58, pp. 178- 181 ,(1976) , 10.1016/0039-6028(76)90131-X
Tsuneya Ando, Self-Consistent Results for a GaAs/AlxGa1-xAs Heterojunciton. II. Low Temperature Mobility Journal of the Physical Society of Japan. ,vol. 51, pp. 3900- 3907 ,(1982) , 10.1143/JPSJ.51.3900
Frank Stern, Calculated Temperature Dependence of Mobility in Silicon Inversion Layers Physical Review Letters. ,vol. 44, pp. 1469- 1472 ,(1980) , 10.1103/PHYSREVLETT.44.1469
Kaoru Inoue, Hiroyuki Sakaki, Junji Yoshino, Yoshiaki Yoshioka, Effects of substrate temperatures on the doping profiles of Si in selectively doped AlGaAs/GaAs/AlGaAs double‐heterojunction structures Applied Physics Letters. ,vol. 46, pp. 973- 975 ,(1985) , 10.1063/1.95785
Hiroyuki Sakaki, Masaaki Tanaka, Junji Yoshino, One Atomic Layer Heterointerface Fluctuations in GaAs-AlAs Quantum Well Structures and Their Suppression by Insertion of Smoothing Period in Molecular Beam Epitaxy Japanese Journal of Applied Physics. ,vol. 24, pp. L417- L420 ,(1985) , 10.1143/JJAP.24.L417
Masaaki Tanaka, Hiroyuki Sakaki, Junji Yoshino, Atomic-Scale Structures of Top and Bottom Heterointerfaces in GaAs-AlxGa1-xAs (x=0.2-1) Quantum Wells Prepared by Molecular Beam Epitaxy with Growth Interruption Japanese Journal of Applied Physics. ,vol. 25, pp. L155- L158 ,(1986) , 10.1143/JJAP.25.L155
A. Gold, Metal insulator transition due to surface roughness scattering in a quantum well Solid State Communications. ,vol. 60, pp. 531- 534 ,(1986) , 10.1016/0038-1098(86)90733-7
R. E. Prange, Tsu-Wei Nee, Quantum Spectroscopy of the Low-Field Oscillations in the Surface Impedance Physical Review. ,vol. 168, pp. 779- 786 ,(1968) , 10.1103/PHYSREV.168.779
Sadayuki Takahashi, Multilayer Piezoelectric Ceramic Actuators and Their Applications Japanese Journal of Applied Physics. ,vol. 24, pp. 41- ,(1985) , 10.7567/JJAPS.24S2.41