Silicon on insulator thermodiode with extremely wide working temperature range
作者： A. De Luca , V. Pathirana , S. Z. Ali , F. Udrea
DOI: 10.1109/TRANSDUCERS.2013.6627166
关键词: Silicon on insulator 、 Microheater 、 Atmospheric temperature range 、 Diode 、 Dielectric heating 、 Silicon 、 Materials science 、 Optoelectronics 、 Linearity 、 Tungsten
摘要: This paper presents for the first time performance of a silicon-on-insulator (SOI) p+-n+ thermodiode, which can operate in an extremely wide temperature range -200 °C to 700 while maintaining its linearity. The thermodiode is embedded thin dielectric membrane underneath tungsten microheater, allows diode characterization at very high (> 800 °C). effect junction area (Aj) on linearity, sensitivity and self-heating experimentally theoretically investigated. Results long-term stability are also reported.
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