Experimental, analytical and numerical investigation of non-linearity of SOI diode temperature sensors at extreme temperatures
作者： A. De Luca , V. Pathirana , S.Z. Ali , D. Dragomirescu , F. Udrea
DOI: 10.1016/J.SNA.2014.11.023
关键词:
摘要: This paper presents the performance of a silicon-on-insulator (SOI) p+/p-well/n+ diode temperature sensor, which can operate in an extremely wide range 80 K to 1050 K. The thermodiode is placed underneath tungsten micro-heater embedded thin dielectric membrane, obtained with post-CMOS deep reactive ion etching process. Analytical and numerical models are used support experimental findings. Non-linearity, sensitivity methods for their reduction enhancement, respectively, investigated detail.
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