Limiting characteristics of diode temperature sensors
作者： Yu.M Shwarts , V.L Borblik , N.R Kulish , E.F Venger , V.N Sokolov
DOI: 10.1016/S0924-4247(00)00445-3
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摘要: Abstract The criteria are formulated, which allow determination of the sets electrophysical and design parameters diode temperature sensors (DTSs) providing either maximal extent response curve (TRC) or sensitivity DTSs. New method for a self-consistent device optimization is developed in framework model diffusion current flow through an abrupt asymmetric p–n junction, ideality factor assumed to be equal unity. For Si-, GaAs-, Ge-based DTSs with n+–p p+–n junctions, limiting TRCs dependencies have been calculated. experimentally measured metrology characteristics shown within range restricted by established characteristics.
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