Temperature sensitivity modeling of pn-junction diodes for microbolometer-based thermal imaging applications
作者： Fabian Utermohlen , Ingo Herrmann , Daniel B. Etter , Shen Hue Sun , Joachim Burghartz
DOI: 10.1109/ISCDG.2013.6656299
关键词: p–n junction 、 Materials science 、 Temperature sensitive 、 Temperature sensitivity 、 Optoelectronics 、 Bolometer 、 Microbolometer 、 Diode 、 Current density 、 Thermal
摘要: A model for the electrical behavior of pn-junction diodes biased in forward direction and used as a temperature sensitive device (TSD) microbolometers is presented. It based on well-known Shockley equation extended by ideality factor m. We demonstrate that largest sensitivity can be reached at low current density operation featuring high m > 1.
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