Temperature-variable high-frequency dynamic modeling of PIN diode
作者： Shangbin Ye , Jiajia Zhang , Yicheng Zhang , Yongtao Yao
DOI: 10.1088/1674-4926/37/4/044010
关键词:
摘要: The PIN diode model for high frequency dynamic transient characteristic simulation is important in conducted EMI analysis. should take junction temperature into consideration since equipment usually works at a wide range of temperature. In this paper, temperature-variable the built, which based on Laplace-transform analytical constant relationship between parameters and expressed as functions by analyzing physical principle these parameters. A fast recovery power MUR1560 chosen test sample its performance tested under inductive load chamber experiment, used parameter extraction verification. Results show that proposed paper accurate reverse with relatively small errors from 25 to 120℃.
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sci-hub.se 参考文章(14)
Donald Neamen, Semiconductor Physics and Devices ,(1991)
B. Jayant Baliga, Fundamentals of Power Semiconductor Devices Springer. ,(2008) , 10.1007/978-0-387-47314-7
PM Igic, PA Mawby, MS Towers, S Batcup, None, New physically-based PiN diode compact model for circuit modelling applications IEE Proceedings - Circuits, Devices and Systems. ,vol. 149, pp. 257- 263 ,(2002) , 10.1049/IP-CDS:20020365
Jun-quan Chen, Xing Chen, Chang-Jun Liu, Kama Huang, Xiao-Bang Xu, Analysis of Temperature Effect on p-i-n Diode Circuits by a Multiphysics and Circuit Cosimulation Algorithm IEEE Transactions on Electron Devices. ,vol. 59, pp. 3069- 3077 ,(2012) , 10.1109/TED.2012.2211602
Fabian Utermohlen, Ingo Herrmann, Daniel B. Etter, Shen Hue Sun, Joachim Burghartz, Temperature sensitivity modeling of pn-junction diodes for microbolometer-based thermal imaging applications international semiconductor conference. pp. 1- 4 ,(2013) , 10.1109/ISCDG.2013.6656299
Salvatore Bellone, Francesco G. Della Corte, Luigi Di Benedetto, Gian Domenico Licciardo, An Analytical Model of the Switching Behavior of 4H-SiC p $^{\bm +}$ -n-n $^{\bm +}$ Diodes from Arbitrary Injection Conditions IEEE Transactions on Power Electronics. ,vol. 27, pp. 1641- 1652 ,(2012) , 10.1109/TPEL.2011.2164097
C.L. Ma, P.O. Lauritzen, J. Sigg, Modeling of power diodes with the lumped-charge modeling technique IEEE Transactions on Power Electronics. ,vol. 12, pp. 398- 405 ,(1997) , 10.1109/63.575666
Gustavo Malagoni Buiatti, Federica Cappelluti, Giovanni Ghione, Physics-Based PiN Diode SPICE Model for Power-Circuit Simulation IEEE Transactions on Industry Applications. ,vol. 43, pp. 911- 919 ,(2007) , 10.1109/TIA.2007.900492
A.G.M. Strollo, A new SPICE model of power P-I-N diode based on asymptotic waveform evaluation IEEE Transactions on Power Electronics. ,vol. 12, pp. 12- 20 ,(1997) , 10.1109/63.554165
Angus T. Bryant, Liqing Lu, Enrico Santi, Patrick R. Palmer, Jerry L. Hudgins, Physical Modeling of Fast p-i-n Diodes With Carrier Lifetime Zoning, Part I: Device Model IEEE Transactions on Power Electronics. ,vol. 23, pp. 189- 197 ,(2008) , 10.1109/TPEL.2007.911823