作者: Faiz Salleh , Kiyosumi Asai , Akihiro Ishida , Hiroya Ikeda
关键词: Doping 、 Impurity 、 Semiconductor materials 、 Seebeck coefficient 、 Condensed matter physics 、 Materials science 、 Silicon on insulator
摘要: We measured the Seebeck coefficient of P-doped ultrathin silicon-on-insulator (SOI) layers with thicknesses 2–100 nm. The dependence on impurity concentration was investigated, and shown to be in good agreement that bulk Si for SOI above 6 In addition, it found decrease increasing concentration, which is usually observed semiconductor materials. However, doping levels 3.5×1019 cm-3, increase. This likely due influence an band.