Seebeck Coefficient of Ultrathin Silicon-on-Insulator Layers

作者: Faiz Salleh , Kiyosumi Asai , Akihiro Ishida , Hiroya Ikeda

DOI: 10.1143/APEX.2.071203

关键词: DopingImpuritySemiconductor materialsSeebeck coefficientCondensed matter physicsMaterials scienceSilicon on insulator

摘要: We measured the Seebeck coefficient of P-doped ultrathin silicon-on-insulator (SOI) layers with thicknesses 2–100 nm. The dependence on impurity concentration was investigated, and shown to be in good agreement that bulk Si for SOI above 6 In addition, it found decrease increasing concentration, which is usually observed semiconductor materials. However, doping levels 3.5×1019 cm-3, increase. This likely due influence an band.

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