Effect of cerium doping on the microstructure and photoelectric properties of Ce-doped ITO films

摘要: Abstract In this paper, the Ce-doped ITO films were successfully deposited using targets with 0–2.0 wt% of CeO2. Various analytical methods adopted to investigate effect cerium doping on microstructure and photoelectric properties films. It is found that: (1) an Ar atmosphere, grains prefer grow along [1 0 0] direction, preferential growth becomes more intensified increase in deposition time, but grain direction will gradually be changed [1 1 1] amount CeO2; (2) Ce can weaken crystallinity, reduce surface roughness enhance density films; (3) The addition oxygen loss thin cannot change elemental chemical states In, Sn O; (4) Both transparency electrical conductivity 0.5 wt% are superior those pure (5) scattering effects carriers amorphous polycrystalline mainly derived from ionized impurity scattering, respectively.