Growth and characterization of Mn-doped In2O3 nanowires and terraced microstructures
作者： M. Herrera , A. Cremades , D. Maestre , J. Piqueras
DOI: 10.1016/J.ACTAMAT.2014.04.069
关键词: Nanowire 、 Crystallography 、 X-ray photoelectron spectroscopy 、 Luminescence 、 Direct and indirect band gaps 、 Analytical chemistry 、 Cathodoluminescence 、 Scanning electron microscope 、 Electron beam-induced current 、 Materials science 、 Manganese
摘要: Abstract Mn-doped In2O3 micro- and nanostructures were grown by the thermal evaporation–deposition method using a precursor powder composed of manganese compound. Terraced microstructures grow at 1200 °C when Mn2O3 in powders, while thinner nanowires have been obtained temperatures between 560 780 °C MnCO3 mixture. The morphology, as well luminescencent, electrical chemical properties, characterized means X-ray diffraction, scanning electron microscopy, backscattered cathodoluminescence (CL), energy dispersive spectroscopy, remote beam induced current (REBIC) photoelectron spectroscopy (XPS). amount Mn incorporated these low-dimensional structures is below 1 at.%. show luminescence 1.91 2.27 eV, related to defects associated with an excess oxygen single ionized vacancies ( V O + ), respectively. An emission 2.94 eV, possibly due direct band gap In2O3, has also observed. presence , which tend accumulate edges terraces microstructures, traced combined CL–REBIC–XPS techniques, incorporation Mn2+.
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