Low rdson device and method of manufacturing the same
作者： Surya Kris Amethystna , Guowei Zhang
DOI:
关键词: Optoelectronics 、 Substrate (printing) 、 Doping 、 Materials science 、 Transistor 、 Electrical engineering
摘要: A device and method of making thereof are disclosed. The includes a substrate having region for switch transistor. transistor gate disposed on the in first second heavily doped regions adjacent to gate. serves as source drain lightly diffusion (LDD) thereto is devoid LDD region.
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