The Nature of Intermediate Range Order in Si:F:H:(P) Alloy Systems
作者： R. Tsu , S. S. Chao , M. Izu , S. R. Ovshinsky , G. J. Jan
关键词: Amorphous solid 、 Microcrystalline 、 Alloy 、 Raman spectroscopy 、 Percolation 、 Volume fraction 、 Analytical chemistry 、 Conductivity 、 Chemistry 、 Mineralogy 、 Crystallinity
摘要: Previously, we have reported, in heavily As- or P-doped Si:F:H alloy systems, the appearance of a Raman peak lying intermediate between 522 cm-1 for c-Si and 480 amorphous Si.(1,2) Whenever such is observed, electrolyte-electro-reflectance (EtR) peaks appear around 2 eV, together with those associated at 3.4 eV 4.5 eV. We explained these observations terms an range order “microcrystalline phase.” Now found similar moderately samples. On glass substrates EER may be observed when volume fraction crystallinity has passed 0.16, critical density, ρ cr, percolation processes. (3,4) However, on stainless steel substrates, been cr < indicating that unlike conductivity, EtR requires only existence relatively sharp electronic density states.
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