Field effect transistor and manufacturing method thereof
作者： Junji Koga , Atsuhiro Kinoshita
DOI:
关键词: Organic field-effect transistor 、 Semiconductor 、 Static induction transistor 、 Electrode 、 Electrical engineering 、 Communication channel 、 Impurity 、 Field-effect transistor 、 Materials science 、 Optoelectronics 、 Depletion region
摘要: A field effect transistor includes a first semiconductor region forming channel region, gate electrode insulatively disposed above the source and drain electrodes formed to sandwich in lengthwise direction, second regions between having impurity concentration higher than region. The thickness of direction is set value equal or less depletion layer width determined by so that depleted no-voltage application state.
lens.org 参考文章(19)
Yong-bae Choi, Keon-Soo Kim, FET having gate insulating film of nonuniform thickness and asymmetrical source and drain structures ,(1996)
John Snyder, John Larson, Schottky barrier cmos device and method ,(2003)
Katsuki Furukawa, Yoshihisa Fujii, Akira Suzuki, Silicon carbide field-effect transistor with improved breakdown voltage and low leakage current ,(1991)
Daniel J. Connelly, Daniel E. Grupp, Insulated gate field effect transistor having passivated schottky barriers to the channel ,(2003)
JR Tucker, Chinlee Wang, P Scott Carney, None, Silicon field-effect transistor based on quantum tunneling Applied Physics Letters. ,vol. 65, pp. 618- 620 ,(1994) , 10.1063/1.112250
Junji Koga, Semiconductor device including a tunnel effect element ,(1997)
Arthur E. Geissberger, Matthew L. Balzan, Robert A. Sadler, Self-aligned refractory gate process with self-limiting undercut of an implant mask ,(1987)
Teruyoshi Mihara, Kenji Yao, Tsutomu Matsushita, Yoshinori Murakami, Schottky tunnel transistor device ,(1990)
Simon Deleonibus, Metal source and drain mos transistor, and method for making same ,(2001)