Semiconductor device and fabrication method for the same
作者： Nobuyoshi Takahashi , Ichirou Matsuo
DOI:
关键词:
摘要: The semiconductor device includes: memory cells each having a first multilayer electrode including lower made of conductive film and upper second formed one on the other with interface therebetween; diode as silicon oxide at between substrate. has thickness which electrical connection is maintained, epitaxial growth substrate inhibited.
lens.org 参考文章(43)
Goro Kitsukawa, Ryoichi Hori, Katsuhiro Shimohigashi, Noriyuki Homma, Yoshikazu Saito, Nobuo Tanba, Yutaka Kobayashi, Kiyoo Itoh, Masahiro Yamamura, Takao Watanabe, Takahide Ikeda, Hideaki Uchida, Shinji Nakazato, Semiconductor CMOS memory device with separately biased wells ,(1994)
Woo-tag Kang, Gate layer diode method and apparatus ,(2004)
Cheng-Guo Jin, Bunji Mizuno, Yuichiro Sasaki, Method for introducing impurities and apparatus for introducing impurities ,(2008)
Junji Koga, Atsuhiro Kinoshita, Field effect transistor and manufacturing method thereof ,(2006)
Kazuhiro Shimizu, Fumitaka Arai, Non-volatile semiconductor memory device having memory cell array suitable for high density and high integration ,(2002)
Boaz Eitan, NROM fabrication method ,(2007)
Masatoshi Arai, Toshiki Yabu, Mizuki Segawa, Method for fabricating a semiconductor device having a nitrogen diffusion layer ,(1997)
James R. Pfiester, John R. Alvis, Orin W. Holland, Field implant process for CMOS using germanium ,(1987)
Ming-Sang Kwan, Yi He, Mark Randolph, Michael Brennan, Variable salicide block for resistance equalization in an array ,(2007)
Josef Willer, Norbert Schulze, Thomas Mikolajick, Christoph Ludwig, Karl Heinz Kuesters, Semiconductor memory having charge trapping memory cells and fabrication method thereof ,(2005)