NON-VOLATILE MEMORY ARRAY AND METHOD OF FABRICATING THE SAME
作者： Chen Po-An
DOI:
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摘要: A non-volatile memory array includes a substrate, plurality of bit lines, isolation structure, patterned stacked an oxide layer, and word lines. The lines are disposed in the area between adjacent two is consisted first region second region. structures located on structure substrate region, wherein at least charge trapping layer tunnel dielectric layer. structure. across
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