Characterization of epitaxial GaAs and AlxGa1−xAs layers doped with oxygen
作者： M. S. Goorsky , T. F. Kuech , F. Cardone , P. M. Mooney , G. J. Scilla
DOI: 10.1063/1.105038
关键词: Methoxide 、 Silicon 、 Impurity 、 Doping 、 Epitaxy 、 Oxygen 、 Analytical chemistry 、 Secondary ion mass spectrometry 、 Mole fraction 、 Chemistry
摘要: Intentional oxygen doping (≳1017 cm−3) of GaAs and Al0.30Ga0.70As epitaxial layers was achieved during metalorganic vapor phase epitaxy through use an oxygen‐bearing precursor, dimethylaluminum methoxide (CH3)2AlOCH3. The incorporation very low levels Al (AlAs mole fraction <0.005) in the leads to compensation intentionally introduced Si donors. Additionally, deep associated with were detected. introduction dimethyl aluminum AlxGa1−xAs growth did not alter mode or degrade crystallinity ternary layers, but incorporate high which compensated both indicates that resistivity buffer can be grown by epitaxy.
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