Formation of thermally stable high-resistivity AlGaAs by oxygen implantation
作者： S. J. Pearton , M. P. Iannuzzi , C. L. Reynolds , L. Peticolas
DOI: 10.1063/1.99477
关键词:
摘要: Oxygen implantation into n+‐AlGaAs, followed by annealing above 600 °C, creates a deep acceptor level that compensates the shallow donors present in material. Temperature‐dependent Hall measurements show resistivity of this compensated AlGaAs has thermal activation energy 0.49 eV, contrast to value 0.79 eV for compensation caused ion‐induced damage. The latter is stable only whereas chemically induced O‐implanted 950 °C.
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