Scaling Limit of Bilayer Phosphorene FETs
作者： Demin Yin , Gyuchull Han , Youngki Yoon
关键词: Phosphorene 、 Scaling limit 、 Semiconductor device 、 Bilayer 、 Nanotechnology 、 Transistor 、 Gate dielectric 、 Field-effect transistor 、 Materials science 、 Condensed matter physics 、 Monolayer
摘要: We investigate bilayer phosphorene field-effect transistors (FETs) by self-consistent atomistic quantum transport simulations. Despite a penalty in electrostatic control for multiple layers, 10-nm-channel FETs can exhibit excellent device characteristics, such as $\text{I}_{ {on}} >3$ mA/ $\mu \text{m}$ , large current ratio ( $> 10^{\mathrm { {7}}})$ and small subthreshold swing (SS) of 66 mV/dec, with double-gate structure. While the scaling gate dielectric monotonically enhances overall performance this device, channel length only be scaled down to $\sim 8$ nm due significant short-channel effects. benchmark against MoS2 WSe2 along monolayer which reveals that have favorable switching characteristics over other similar 2-D semiconductor devices, making both attractive future applications. Our simulation results not provide limit but also create irreplaceable insights into proper design parameter optimizations.
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