Scaling Effect of Phosphorene Nanoribbon - Uncovering the Origin of Asymmetric Current Transport.

摘要: In this paper, phosphorene nanoribbons (PNRs) are theoretically studied using a multiscale simulation flow from the ab initio level to tight binding (TB) level. The scaling effects of both armchair PNRs (aPNRs) and zigzag (zPNRs) material properties device explored. much larger effective mass holes compared that electrons in zPNR is responsible for its asymmetric transport. However, aPNR, not only difference but also non-equal density state (DOS) distributions near valence band maximum (VBM) conduction minimum (CBM) lead This distribution phenomenon caused by energy degeneracies VBM. Based on these two different mechanisms, PNRs' transport characteristics at explained, it shown behaviour can be ameliorated well reducing ribbon width an aPNR MOSFET. Calculation results indicate aPNR's comparable graphene nanoribbon (GNR) same bandgap; however, gap variation more stable regular than GNR, making good candidate use low-dimensional nano devices.