All-epitaxial fabrication of thick, orientation-patterned GaAs films for nonlinear optical frequency conversion
作者： L. A. Eyres , P. J. Tourreau , T. J. Pinguet , C. B. Ebert , J. S. Harris
DOI: 10.1063/1.1389326
关键词: Etching (microfabrication) 、 Molecular beam epitaxy 、 Optoelectronics 、 Chemical vapor deposition 、 Gallium arsenide 、 Substrate (electronics) 、 Isotropic etching 、 Materials science 、 Epitaxy 、 Fabrication
摘要: Orientation-patterned GaAs (OPGaAs) films of 200 μm thickness have been grown by hydride vapor phase epitaxy (HVPE) on an orientation-patterned template fabricated molecular beam (MBE). Fabrication the templates utilized only MBE and chemical etching, taking advantage GaAs/Ge/GaAs heteroepitaxy to control crystal orientation top film relative substrate. Antiphase domain boundaries were observed propagate vertically under HVPE growth conditions so that duty cycle was preserved through thick for all periods attempted. Quasiphase-matched frequency doubling a CO2 laser demonstrated with confocally focused 4.6 mm long OPGaAs film.
scitation.org
harvard.edu
osti.gov
aip.org 
sci-hub.se 参考文章(10)
S. J. B. Yoo, C. Caneau, R. Bhat, M. A. Koza, A. Rajhel, Neo Antoniades, Wavelength conversion by difference frequency generation in AlGaAs waveguides with periodic domain inversion achieved by wafer bonding Applied Physics Letters. ,vol. 68, pp. 2609- 2611 ,(1996) , 10.1063/1.116197
Christopher B Ebert, Loren A Eyres, Martin M Fejer, James S Harris, MBE growth of antiphase GaAs films using GaAs/Ge/GaAs heteroepitaxy Journal of Crystal Growth. ,vol. 201202, pp. 187- 193 ,(1999) , 10.1016/S0022-0248(98)01317-7
E. Lallier, L. Becouarn, M. Brévignon, J. Lehoux, Infrared difference frequency generation with quasi-phase-matched GaAs Electronics Letters. ,vol. 34, pp. 1609- 1611 ,(1998) , 10.1049/EL:19981143
E Gil-Lafon, J Napierala, D Castelluci, A Pimpinelli, R Cadoret, B Gérard, Selective growth of GaAs by HVPE: Keys for accurate control of the growth morphologies Journal of Crystal Growth. ,vol. 222, pp. 482- 496 ,(2001) , 10.1016/S0022-0248(00)00961-1
A. Szilagyi, A. Hordvik, H. Schlossberg, A quasi‐phase‐matching technique for efficient optical mixing and frequency doubling Journal of Applied Physics. ,vol. 47, pp. 2025- 2032 ,(1976) , 10.1063/1.322930
Shinji Koh, Takashi Kondo, Ebihara, Minoru, Ishiwada, Tetsuya, Sawada, Hidetaka, Ichinose, Hideki, Shoji, Ichiro, Ryoichi Ito, GaAs/Ge/GaAs Sublattice Reversal Epitaxy on GaAs (100) and (111) Substrates for Nonlinear Optical Devices Japanese Journal of Applied Physics. ,vol. 38, pp. L508- L511 ,(1999) , 10.1143/JJAP.38.L508
M.M. Fejer, G.A. Magel, D.H. Jundt, R.L. Byer, Quasi-phase-matched second harmonic generation: tuning and tolerances IEEE Journal of Quantum Electronics. ,vol. 28, pp. 2631- 2654 ,(1992) , 10.1109/3.161322
M. Tong, D. G. Ballegeer, A. Ketterson, E. J. Roan, K. Y. Cheng, I. Adesida, A comparative study of wet and dry selective etching processes for GaAs/AIGaAs/InGaAs pseudomorphic MODFETs Journal of Electronic Materials. ,vol. 21, pp. 9- 15 ,(1992) , 10.1007/BF02670914
D. Zheng, L. A. Gordon, Y. S. Wu, R. S. Feigelson, M. M. Fejer, R. L. Byer, K. L. Vodopyanov, 16-microm infrared generation by difference-frequency mixing in diffusion-bonded-stacked GaAs Optics Letters. ,vol. 23, pp. 1010- 1012 ,(1998) , 10.1364/OL.23.001010
L. Becouarn, B. Gerard, M. Brévignon, J. Lehoux, Y. Gourdel, E. Lallier, Second harmonic generation of CO2 laser using thick quasi-phase-matched GaAs layer grown by hydride vapour phase epitaxy Electronics Letters. ,vol. 34, pp. 2409- 2410 ,(1998) , 10.1049/EL:19981660