p-Type conducting transparent characteristics of delafossite Mg-doped CuCrO2thin films prepared by RF-sputtering

摘要: The growth of technologically relevant compounds, Mg-doped CuCrO2 delafossite thin films, on a quartz substrate by radio-frequency sputtering is reported in this work. deposition, performed at room temperature, leads to nanocrystalline phase with extremely low roughness and high density. Delafossite characteristic diffraction peaks were obtained as function the thermal treatment under primary vacuum. electrical conductivity was optimized until 1.6 S cm−1 an optical transmittance 63% visible range 600 °C annealing vacuum applied for 4 h. transport properties analyzed Seebeck Hall measurement, integrated spectrophotometry simulation. These measurements highlighted degenerated semiconductor behavior using hopping mechanism hole concentration (1021 cm−3) mobility (0.2 cm2 V−1 s−1). direct bandgap 3.3 eV has been measured according Tauc's relationship. A refractive index 2.3 wavelength 1100 nm determined spectroscopic ellipsometry confirmed two independent modellings reflectance spectra. All these p-type TCO optoelectronic characteristics have led highest Haacke's figure merit (1.5 × 10−7 Ω−1) so far such materials